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CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 1/5
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MTN2302N3
Features
* VDS=20V RDS(ON)=65m@VGS=4.5V, IDS=3.6A RDS(ON)=95m@VGS=2.5V, IDS=3.1A * Advanced trench process technology * High density cell design for ultra low on resistance * Excellent thermal and electrical capabilities * Compact and low profile SOT-23 package
Equivalent Circuit
MTN2302N3
Outline
SOT-23 D
G GGate SSource DDrain
S
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Symbol VDS VGS ID IDM Ta=25 Ta=75 PD Tj Tstg Limits 20 8 2.4 10 1.25 0.8 -55~+150 -55~+150 Unit V V A A W C C
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Lead Temperature, for 5 second Soldering(1/8" from case)
Note : Surface mounted on FR-4 board, t5sec.
Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 2/5
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Symbol Rth,ja TL
Limit 100 260
Unit C/W C
Electrical Characteristics (Ta=25C)
Symbol Static BVDSS VGS(th) IGSS/F IGSS/R IDSS *ID(ON) *RDS(ON) Min. 20 0.45 6 Typ. 50 75 10 450 70 43 7 55 16 10 5.2 0.65 1.5 0.75 Max. 100 -100 1 65 95 15 80 60 25 10 1.6 1.2 Unit V V nA nA A A m S Test Conditions VGS=0, ID=250A VDS=VGS, ID=250A VGS=+8V, VDS=0 VGS=-8V, VDS=0 VDS=20V, VGS=0 VDS=5V, VGS=4.5V ID=3.6A, VGS=4.5V ID=3.1A, VGS=2.5V VDS=5V, ID=3.6A
*GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode ISD VSD -
pF
VDS=10V, VGS=0, f=1MHz VDD=10V, ID=1A, RL=10 VGEN=4.5V, RG=6 VDS=10V, ID=3.6A, VGS=4.5V, VGS=0V, ISD=1A
*Pulse Test : Pulse Width 300s, Duty Cycle2%
ns
nC
A V
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 3/5
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MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 4/5
..
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 5/5
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A L 3 B 1 2 S
Marking:
TE 02
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2302N3
CYStek Product Specification

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